Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2013.08.016
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dc.titleStructural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates
dc.contributor.authorHo, J.W.
dc.contributor.authorZhang, L.
dc.contributor.authorWee, Q.
dc.contributor.authorTay, A.A.O.
dc.contributor.authorHeuken, M.
dc.contributor.authorChua, S.-J.
dc.date.accessioned2014-10-07T04:37:12Z
dc.date.available2014-10-07T04:37:12Z
dc.date.issued2013
dc.identifier.citationHo, J.W., Zhang, L., Wee, Q., Tay, A.A.O., Heuken, M., Chua, S.-J. (2013). Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates. Journal of Crystal Growth 383 : 1-8. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2013.08.016
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83094
dc.description.abstractWe examine the structural and morphological qualities of In xGa1-xN grown directly on AlN/Si(111) substrates by MOCVD as a function of growth pressure and temperature. The use of elevated pressures (up to 300 Torr) resulted in the suppression of InGaN phase separation and indium droplet formation allowing single phase, textured epitaxial (0002)-oriented InxGa1-xN to be grown on the highly mismatched substrates. Various indium compositions x, up to ~0.4, can subsequently be achieved by adjusting the growth temperature over the range of 655 C-795 C. Increase in growth temperature reduces the indium composition x but is accompanied by a decrease in the FWHM of the (002)-ω and asymmetric (105)-ω rocking curves indicating lower crystallographic tilt and improved crystal quality. The reduction in tilt saturates at ~705 C. This corroborates with room-temperature photoluminescence (PL) measurements where PL is not detectable below ~705 C but emerges above this temperature and narrows in FWHM with further temperature increase. SEM shows that films grown at low pressure are compositionally and morphologically non-uniform, while films grown at elevated pressure are homogeneous, single phase and composed of densely packed, interconnected epitaxial islands, with lower temperature favouring a smaller island size. We conclude that while lower temperatures favour increased indium incorporation, the ensuing smaller island size and greater extent of island boundaries, arising from larger lattice mismatch and lower surface mobility of species, degrades crystal quality appreciably. Above 705 C, improvement in crystallographic quality is limited by the AlN growth template and requires innovative MOCVD growth strategies. © 2013 Elsevier B.V.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jcrysgro.2013.08.016
dc.sourceScopus
dc.subjectA1. AlN
dc.subjectA1. InGaN
dc.subjectA1. Suppression of phase separation
dc.subjectA3. Metal organic chemical vapour deposition
dc.subjectB2. Semiconducting III-V materials
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.contributor.departmentMECHANICAL ENGINEERING
dc.description.doi10.1016/j.jcrysgro.2013.08.016
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume383
dc.description.page1-8
dc.description.codenJCRGA
dc.identifier.isiut000326049000001
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