Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jmmm.2006.01.136
DC FieldValue
dc.titleStructural and magnetoresistive properties of half metallic Co2Mn1-xSi thin films
dc.contributor.authorLi, K.B.
dc.contributor.authorQiu, J.J.
dc.contributor.authorLuo, P.
dc.contributor.authorAn, L.H.
dc.contributor.authorGuo, Z.B.
dc.contributor.authorZheng, Y.K.
dc.contributor.authorHan, G.C.
dc.contributor.authorWu, Y.H.
dc.contributor.authorWang, S.J.
dc.date.accessioned2014-10-07T04:37:11Z
dc.date.available2014-10-07T04:37:11Z
dc.date.issued2006-08
dc.identifier.citationLi, K.B., Qiu, J.J., Luo, P., An, L.H., Guo, Z.B., Zheng, Y.K., Han, G.C., Wu, Y.H., Wang, S.J. (2006-08). Structural and magnetoresistive properties of half metallic Co2Mn1-xSi thin films. Journal of Magnetism and Magnetic Materials 303 (2 SPEC. ISS.) : e196-e200. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2006.01.136
dc.identifier.issn03048853
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83093
dc.description.abstractPolycrystalline Co2Mn1-xSi (CMS) thin films with Mn-deficiency can grow on different types of substrates such as MgO (1 0 0) single crystal, α-sapphire (0 0 0 1) and Si coated with SiO2 either by using V or Ta/Cu as the seed layer. The magnetic property, especially the coercivity of the CMS thin films strongly depends on the crystalline structure and microstructure of the CMS thin film, hence it is affected by the substrate and also the seed layer. Very soft CMS thin film with coercivity of about 20 Oe has been obtained when MgO (1 0 0) is used as the substrate. Magnetic tunnel junctions (with MR ratio of about 9%-18%) by utilizing the CMS as one of ferromagnetic electrodes have been successfully fabricated. The degradation of the magnetoresistive effect of the MTJ after magnetic annealing is attributed to the diffusion of the Mn-atoms into the tunnel barrier during the annealing process. © 2006 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jmmm.2006.01.136
dc.sourceScopus
dc.subjectHalf metals
dc.subjectHeusler alloy
dc.subjectMagnetic tunneling junction
dc.subjectThermal stability
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.jmmm.2006.01.136
dc.description.sourcetitleJournal of Magnetism and Magnetic Materials
dc.description.volume303
dc.description.issue2 SPEC. ISS.
dc.description.pagee196-e200
dc.description.codenJMMMD
dc.identifier.isiut000208249000043
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.