Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.910784
DC FieldValue
dc.titleStrained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors
dc.contributor.authorWang, G.H.
dc.contributor.authorToh, E.-H.
dc.contributor.authorDu, A.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:37:05Z
dc.date.available2014-10-07T04:37:05Z
dc.date.issued2008-01
dc.identifier.citationWang, G.H., Toh, E.-H., Du, A., Lo, G.-Q., Samudra, G., Yeo, Y.-C. (2008-01). Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors. IEEE Electron Device Letters 29 (1) : 77-79. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.910784
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83086
dc.description.abstractIn this letter, a strained silicon-germanium (SiGe) n-channel field-effect transistor (n-FET) featuring embedded silicon (Si) source-and-drain (S/D) stressors is demonstrated. A novel Ge-condensation technique was employed to form Si0.75 Ge0.25-on-insulator (SGOI) substrates with excellent surface quality. Transistors with gate length LG down to 60 nm were fabricated on the SGOI substrates. The strained n-FETs incorporated Si S/D regions, which are lattice-mismatched with respect to the Si0.75Ge0.25 channel, to induce uniaxial tensile strain in the Si0.75Ge0.25 channel for electron mobility enhancement. This leads to a 36% rise in linear drain-current and a 21% rise in saturation drive current over control SiGe channel devices at a fixed OFF-state current. Increasing the recess depth in S/D regions prior to the selective epitaxial growth of Si increases the channel stress, thus, a higher saturation drive-current enhancement can be achieved. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2007.910784
dc.sourceScopus
dc.subjectGe condensation
dc.subjectMobility
dc.subjectSilicon-germanium (SiGe)
dc.subjectStrain
dc.subjectUniaxial
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2007.910784
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue1
dc.description.page77-79
dc.description.codenEDLED
dc.identifier.isiut000252098100023
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

10
checked on Apr 12, 2021

WEB OF SCIENCETM
Citations

9
checked on Apr 12, 2021

Page view(s)

61
checked on Apr 12, 2021

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.