Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.46.2062
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dc.titleStrained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
dc.contributor.authorWang, G.H.
dc.contributor.authorToh, E.-H.
dc.contributor.authorTung, C.-H.
dc.contributor.authorDu, A.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:37:05Z
dc.date.available2014-10-07T04:37:05Z
dc.date.issued2007-04-24
dc.identifier.citationWang, G.H., Toh, E.-H., Tung, C.-H., Du, A., Lo, G.-Q., Samudra, G., Yeo, Y.-C. (2007-04-24). Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 (4 B) : 2062-2066. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.46.2062
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83085
dc.description.abstractWe report the incorporation of lattice-mismatched source/drain (S/D) stressors for the formation of strained SiGe n-channel transistors with gate lengths LG down to 70 nm. The strained SiGe channel transistor features silicon S/D regions which are pseudomorphically grown by selective epitaxy. Lattice mismatch between the silicon S/D region and the SiGe channel was exploited to induce lateral tensile strain and vertical compressive strain in the channel, leading to enhancement in electron mobility. Experimental results on the strained SiGe n-channel transistors correlate well with stress simulations. Control devices with the lattice-matched SiGe S/D were also fabricated. At a gate length of 70 nm, the tensile strained-SiGe channel n-FET with Si S/D demonstrates 36% higher linear drain current and 20% higher saturation drive current over the control device. ©2007 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.46.2062
dc.sourceScopus
dc.subjectEpitaxy
dc.subjectGe-condensation
dc.subjectMobility
dc.subjectSilicon-germanium
dc.subjectStrain
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/JJAP.46.2062
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
dc.description.volume46
dc.description.issue4 B
dc.description.page2062-2066
dc.description.codenJAPND
dc.identifier.isiut000247050200049
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