Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2008.2005153
DC Field | Value | |
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dc.title | Strained silicon nanowire transistors with germanium source and drain stressors | |
dc.contributor.author | Liow, T.-Y. | |
dc.contributor.author | Tan, K.-M. | |
dc.contributor.author | Lee, R.T.P. | |
dc.contributor.author | Zhu, M. | |
dc.contributor.author | Tan, B.L.-H. | |
dc.contributor.author | Balasubramanian, N. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:37:04Z | |
dc.date.available | 2014-10-07T04:37:04Z | |
dc.date.issued | 2008 | |
dc.identifier.citation | Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Balasubramanian, N., Yeo, Y.-C. (2008). Strained silicon nanowire transistors with germanium source and drain stressors. IEEE Transactions on Electron Devices 55 (11) : 3048-3055. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.2005153 | |
dc.identifier.issn | 00189383 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83084 | |
dc.description.abstract | We report the first demonstration of pure germanium (Ge) source/drain (S/ D) stressors on the ultranarrow or ultrathin Si S/D regions of nanowire FETs with gate lengths down to 5 nm. Ge S/D compressively strains the channel to provide up to ∼100% IDsat enhancement. We also introduce a novel Melt-Enhanced Dopant diffusion and activation technique to form fully embedded Si0.15Ge0.85 S/D stressors in nanowire FETs, further boosting the channel strain and achieving ∼125% IDsat enhancement. © 2008 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2008.2005153 | |
dc.source | Scopus | |
dc.subject | Germanium stressors | |
dc.subject | Silicon-germanium stressors | |
dc.subject | Strained silicon nanowires | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/TED.2008.2005153 | |
dc.description.sourcetitle | IEEE Transactions on Electron Devices | |
dc.description.volume | 55 | |
dc.description.issue | 11 | |
dc.description.page | 3048-3055 | |
dc.description.coden | IETDA | |
dc.identifier.isiut | 000260899000024 | |
Appears in Collections: | Staff Publications |
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