Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance

Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2007.908599

Title:	Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance
Authors:	Loh, W.-Y. Zang, H. Oh, H.-J. Choi, K.-J. Nguyen, H.S. Lo, G.-Q. Cho, B.J.
Keywords:	Carbon Field effect transistors Heterostructure Mobility MOSFET MOSFETs SiGe Silicon Silicon compounds
Issue Date:	Dec-2007
Citation:	Loh, W.-Y., Zang, H., Oh, H.-J., Choi, K.-J., Nguyen, H.S., Lo, G.-Q., Cho, B.J. (2007-12). Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance. IEEE Transactions on Electron Devices 54 (12) : 3292-3298. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.908599
Abstract:	We report a novel Si/Si1-xGex channel with improved noise, current drivability, and reliability using a buried Si0.99C0.01, which can induce higher channel strain for the same Ge concentration. High-κ dielectrics on Si/ Si1-xGex with buried Si0.99 C0.01 show lower charge trapping, better leakage current distribution and less flatband voltage shift. Si/Si1-x Gex channel p-MOSFET with the buried Si0.99 C0.01 shows drive current improvement of up to 20% and better noise immunity. © 2007 IEEE.
Source Title:	IEEE Transactions on Electron Devices
URI:	http://scholarbank.nus.edu.sg/handle/10635/83082
ISSN:	00189383
DOI:	10.1109/TED.2007.908599
Appears in Collections:	Staff Publications

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