Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2007.908599
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dc.titleStrained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance
dc.contributor.authorLoh, W.-Y.
dc.contributor.authorZang, H.
dc.contributor.authorOh, H.-J.
dc.contributor.authorChoi, K.-J.
dc.contributor.authorNguyen, H.S.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorCho, B.J.
dc.date.accessioned2014-10-07T04:37:02Z
dc.date.available2014-10-07T04:37:02Z
dc.date.issued2007-12
dc.identifier.citationLoh, W.-Y., Zang, H., Oh, H.-J., Choi, K.-J., Nguyen, H.S., Lo, G.-Q., Cho, B.J. (2007-12). Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance. IEEE Transactions on Electron Devices 54 (12) : 3292-3298. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.908599
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83082
dc.description.abstractWe report a novel Si/Si1-xGex channel with improved noise, current drivability, and reliability using a buried Si0.99C0.01, which can induce higher channel strain for the same Ge concentration. High-κ dielectrics on Si/ Si1-xGex with buried Si0.99 C0.01 show lower charge trapping, better leakage current distribution and less flatband voltage shift. Si/Si1-x Gex channel p-MOSFET with the buried Si0.99 C0.01 shows drive current improvement of up to 20% and better noise immunity. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2007.908599
dc.sourceScopus
dc.subjectCarbon
dc.subjectField effect transistors
dc.subjectHeterostructure
dc.subjectMobility
dc.subjectMOSFET
dc.subjectMOSFETs
dc.subjectSiGe
dc.subjectSilicon
dc.subjectSilicon compounds
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2007.908599
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume54
dc.description.issue12
dc.description.page3292-3298
dc.description.codenIETDA
dc.identifier.isiut000251268300020
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