Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2007.915053
DC FieldValue
dc.titleStrained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance
dc.contributor.authorAng, K.-W.
dc.contributor.authorLin, J.
dc.contributor.authorTung, C.-H.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:37:02Z
dc.date.available2014-10-07T04:37:02Z
dc.date.issued2008-03
dc.identifier.citationAng, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2008-03). Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance. IEEE Transactions on Electron Devices 55 (3) : 850-857. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.915053
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83081
dc.description.abstractA novel n-channel MOS transistor with a silicon-germanium (SiGe) heterostructure embedded beneath the channel and silicon-carbon source/ drain (Si:C S/D) stressors was demonstrated. The additional SiGe structure couples additional strain from the S/D stressors to the overlying Si channel, leading to enhanced strain effects in the channel region. We termed the SiGe region a strain-transfer structure due to its role in enhancing the transfer of strain from lattice-mismatched S/D stressors to the channel region. Numerical simulations were performed using the finite-element method to explain the strain-transfer mechanism. A significant drive current IDsat improvement of 40% was achieved over the unstrained control devices, which is predominantly due to the strain-induced mobility enhancement. In addition, the impact of scaling the device design parameters on transistor drive current performance was investigated. Guidelines on further performance optimization in such a new device structure are provided. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2007.915053
dc.sourceScopus
dc.subjectLateral tensile strain
dc.subjectn-MOSFET
dc.subjectSilicon-carbon (Si:C)
dc.subjectStrain-transfer structure (STS)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2007.915053
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume55
dc.description.issue3
dc.description.page850-857
dc.description.codenIETDA
dc.identifier.isiut000253505800021
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

25
checked on Dec 3, 2020

WEB OF SCIENCETM
Citations

23
checked on Nov 24, 2020

Page view(s)

41
checked on Nov 30, 2020

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.