Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2008.928025
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dc.titleStrained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content
dc.contributor.authorLiow, T.-Y.
dc.contributor.authorTan, K.-M.
dc.contributor.authorWeeks, D.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorZhu, M.
dc.contributor.authorHoe, K.-M.
dc.contributor.authorTung, C.-H.
dc.contributor.authorBauer, M.
dc.contributor.authorSpear, J.
dc.contributor.authorThomas, S.G.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:37:00Z
dc.date.available2014-10-07T04:37:00Z
dc.date.issued2008
dc.identifier.citationLiow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008). Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content. IEEE Transactions on Electron Devices 55 (9) : 2475-2483. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.928025
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83079
dc.description.abstractPhosphorus in situ doped Si1-yCy films (SiC:P) with substitutional carbon concentration of 1.7% and 2.1% were selectively grown in the source and drain regions of double-gate 〈110〉-oriented (110)-sidewall FinFETs to induce tensile strain in the silicon channel. In situ doping removes the need for a high-temperature spike anneal for source/drain (S/D) dopant activation and thus preserves the carbon substitutionality in the SiC:P films as grown. A strain-induced IDsat enhancement of ∼15% and ∼22% was obtained for n-channel FinFETs with 1.7% and 2.1% carbon incorporated in the S/D, respectively. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2008.928025
dc.sourceScopus
dc.subjectFinFET
dc.subjectIn situ doped
dc.subjectMultiple-gate field-effect transistor (MuGFET)
dc.subjectSilicon-carbon
dc.subjectStrain
dc.subjectStress
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2008.928025
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume55
dc.description.issue9
dc.description.page2475-2483
dc.description.codenIETDA
dc.identifier.isiut000258914000025
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