Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.47.3015
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dc.titleStrain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology
dc.contributor.authorWang, G.H.
dc.contributor.authorToh, E.-H.
dc.contributor.authorWang, X.
dc.contributor.authorHoe, K.-M.
dc.contributor.authorTripathy, S.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:36:58Z
dc.date.available2014-10-07T04:36:58Z
dc.date.issued2008-04-25
dc.identifier.citationWang, G.H., Toh, E.-H., Wang, X., Hoe, K.-M., Tripathy, S., Samudra, G.S., Yeo, Y.-C. (2008-04-25). Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology. Japanese Journal of Applied Physics 47 (4 PART 2) : 3015-3019. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.47.3015
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83076
dc.description.abstractWe report the impact of pulsed laser annealing on the relaxation of strain in SiGe-on-insulator (SGOI) substrates formed by Ge condensation. Ge condensation process results in a partially strained SiGe layer, whose mechanism of stress release is governed by the onset of defects formation. The strain developed in the SiGe layer as condensation proceeds is systematically studied, to identify the critical phase where defects form. The SGOI layer is then irradiated with an excimer laser. The laser annealing repairs any existing defects and relaxes the compressive strain in the crystalline SiGe layer to -0.28% when irradiated with an optimized laser fluence of 450 mJ/cm2 for seven consecutive pulses. Spectroscopic ellipsometry and atomic force microscopy (AFM) measurements of the laser-annealed surface revealed the excellent crystallinity and improved surface roughness (∼0.42 nm). Etch pit density measurements revealed a threading dislocation density of about 4 × 105 cm-2. A clear understanding of the correlation between strain evolution with excimer laser energy density and pulse number enables the SGOI substrate fabrication to be tailored according to the requirements of strain engineering for application in high mobility metal oxide semiconductor field effect transistors (MOSFETs). © 2008 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.47.3015
dc.sourceScopus
dc.subjectExcimer laser
dc.subjectGe-condensation
dc.subjectSilicon-germanium
dc.subjectStrain
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/JJAP.47.3015
dc.description.sourcetitleJapanese Journal of Applied Physics
dc.description.volume47
dc.description.issue4 PART 2
dc.description.page3015-3019
dc.description.codenJAPND
dc.identifier.isiut000255449100150
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