Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4788737
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dc.titleStochastic nonlinear electrical characteristics of graphene
dc.contributor.authorJun Shin, Y.
dc.contributor.authorGopinadhan, K.
dc.contributor.authorNarayanapillai, K.
dc.contributor.authorKalitsov, A.
dc.contributor.authorBhatia, C.S.
dc.contributor.authorYang, H.
dc.date.accessioned2014-10-07T04:36:55Z
dc.date.available2014-10-07T04:36:55Z
dc.date.issued2013-01-21
dc.identifier.citationJun Shin, Y., Gopinadhan, K., Narayanapillai, K., Kalitsov, A., Bhatia, C.S., Yang, H. (2013-01-21). Stochastic nonlinear electrical characteristics of graphene. Applied Physics Letters 102 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4788737
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83072
dc.description.abstractA stochastic nonlinear electrical characteristic of graphene is reported. Abrupt current changes are observed from voltage sweeps between the source and drain with an on/off ratio up to 103. It is found that graphene channel experiences the topological change. Active radicals in an uneven graphene channel cause local changes of electrostatic potential. Simulation results based on the self-trapped electron and hole mechanism account well for the experimental data. Our findings illustrate an important issue of reliable electron transports and help for the understanding of transport properties in graphene devices. © 2013 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4788737
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.4788737
dc.description.sourcetitleApplied Physics Letters
dc.description.volume102
dc.description.issue3
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000314032600065
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