Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jmmm.2004.09.141
DC FieldValue
dc.titleSpin injection with small ferromagnetic metal
dc.contributor.authorTan, S.G.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorGuo, J.
dc.contributor.authorLiew, T.
dc.contributor.authorTeo, K.L.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:36:40Z
dc.date.available2014-10-07T04:36:40Z
dc.date.issued2005-03
dc.identifier.citationTan, S.G., Jalil, M.B.A., Guo, J., Liew, T., Teo, K.L., Chong, T.C. (2005-03). Spin injection with small ferromagnetic metal. Journal of Magnetism and Magnetic Materials 288 : 418-423. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2004.09.141
dc.identifier.issn03048853
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83050
dc.description.abstractWe present a design for spin injection from a ferromagnetic (FM)-nonmagnetic (NM) bilayer into a semiconductor (SC) layer. This device consists of a left bilayer injector, the SC layer and a right bilayer collector. The FM has a much smaller cross-sectional area (A) compared to the device. This increases the spin-dependent resistance as a fraction of the total device resistance and reduces the effect of conductivity mismatch which suppresses spin-injection efficiency. The NM layer is required as a buffer to contain the spreading resistance (R SP) that arises from the discontinuity of A. With Ni 80Fe 20/Cu as the bilayers, and GaAs as the SC, our computation yields a spin-injection efficiency of 20% for doping density N D of 10 18 cm -3, which rises to 30% for ND=1020cm-3. © 2004 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jmmm.2004.09.141
dc.sourceScopus
dc.subjectBilayer
dc.subjectInjection
dc.subjectResistance
dc.subjectSpin
dc.subjectSpreading
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.jmmm.2004.09.141
dc.description.sourcetitleJournal of Magnetism and Magnetic Materials
dc.description.volume288
dc.description.page418-423
dc.description.codenJMMMD
dc.identifier.isiut000227480800053
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