Spin injection due to interfacial spin asymmetry in a ferromagnet- semiconductor hybrid structure

Abstract

We have shown analytically that interfacial resistance, interfacial spin asymmetry, and therefore spin injection in a ferromagnetic-semiconductor- ferromagnetic condensed matter system are coupled to the spatially varying electrochemical potential. Our finding has technological significance because it implies spin injection sensitivity to external electrical bias. We show that as current density increases, spin asymmetry and the magnitude of interfacial resistance reduces, resulting in lower spin injection. We conclude that to increase spin injection, it is necessary to increase the intrinsic spin selectivity of the interfacial barriers. © 2007 American Institute of Physics.