Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2801097
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dc.titleSpin injection due to interfacial spin asymmetry in a ferromagnet- semiconductor hybrid structure
dc.contributor.authorBala Kumar, S.
dc.contributor.authorTan, S.G.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorJiang, Y.
dc.date.accessioned2014-10-07T04:36:40Z
dc.date.available2014-10-07T04:36:40Z
dc.date.issued2007
dc.identifier.citationBala Kumar, S., Tan, S.G., Jalil, M.B.A., Jiang, Y. (2007). Spin injection due to interfacial spin asymmetry in a ferromagnet- semiconductor hybrid structure. Journal of Applied Physics 102 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2801097
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83049
dc.description.abstractWe have shown analytically that interfacial resistance, interfacial spin asymmetry, and therefore spin injection in a ferromagnetic-semiconductor- ferromagnetic condensed matter system are coupled to the spatially varying electrochemical potential. Our finding has technological significance because it implies spin injection sensitivity to external electrical bias. We show that as current density increases, spin asymmetry and the magnitude of interfacial resistance reduces, resulting in lower spin injection. We conclude that to increase spin injection, it is necessary to increase the intrinsic spin selectivity of the interfacial barriers. © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2801097
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2801097
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume102
dc.description.issue8
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000250589300120
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