Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2721868
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dc.titleSpatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements
dc.contributor.authorWong, K.M.
dc.contributor.authorChim, W.K.
dc.contributor.authorAng, K.W.
dc.contributor.authorYeo, Y.C.
dc.date.accessioned2014-10-07T04:36:36Z
dc.date.available2014-10-07T04:36:36Z
dc.date.issued2007
dc.identifier.citationWong, K.M., Chim, W.K., Ang, K.W., Yeo, Y.C. (2007). Spatial distribution of interface trap density in strained channel transistors using the spread of the differential capacitance characteristics in scanning capacitance microscopy measurements. Applied Physics Letters 90 (15) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2721868
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83044
dc.description.abstractIn this letter, the authors obtain, with nanometer spatial resolution, the local spatial distribution of interface trap density (Dit) at the gate oxide-substrate interface across the channel region of a transistor with silicon germanium source/drain (S/D) stressors. The Dit values were extracted using a theoretical model which is based on the correlation of D it with the change in the full width at half maximum of the scanning capacitance microscopy differential capacitance characteristics. Results show that Dit increases with spatial location, measured from the center of the channel, towards the S/D regions of the strained channel transistor. The large value of Dit near the S/D regions is possibly due to germanium diffusion into the channel region and other resulting structural defects. © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2721868
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2721868
dc.description.sourcetitleApplied Physics Letters
dc.description.volume90
dc.description.issue15
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000245690700110
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