Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.910779
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dc.titleSpacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
dc.contributor.authorLiow, T.-Y.
dc.contributor.authorTan, K.-M.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorZhu, M.
dc.contributor.authorHoe, K.-M.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:36:34Z
dc.date.available2014-10-07T04:36:34Z
dc.date.issued2008-01
dc.identifier.citationLiow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008-01). Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors. IEEE Electron Device Letters 29 (1) : 80-82. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.910779
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83041
dc.description.abstractA novel and low-cost spacer removal technique proved successful in further enhancing the IDsat performance of already strained n-channel trigate FinFETs with SiC source and drain (S/D) stressors. This extra enhancement is attributed to increased longitudinal tensile channel stress as a result of increased stress coupling efficiency from the SiC S/D stressors to the channel. The electrical results also establish that this extra enhancement will become even more significant as physical gate lengths are scaled down. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2007.910779
dc.sourceScopus
dc.subjectFinFET
dc.subjectMultiple-gate transistor (MuGFET)
dc.subjectSilicon-carbon
dc.subjectSpacerless
dc.subjectStrain
dc.subjectStress
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2007.910779
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue1
dc.description.page80-82
dc.description.codenEDLED
dc.identifier.isiut000252098100024
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