Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2007.910779
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dc.title | Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors | |
dc.contributor.author | Liow, T.-Y. | |
dc.contributor.author | Tan, K.-M. | |
dc.contributor.author | Lee, R.T.P. | |
dc.contributor.author | Zhu, M. | |
dc.contributor.author | Hoe, K.-M. | |
dc.contributor.author | Samudra, G.S. | |
dc.contributor.author | Balasubramanian, N. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:36:34Z | |
dc.date.available | 2014-10-07T04:36:34Z | |
dc.date.issued | 2008-01 | |
dc.identifier.citation | Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008-01). Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors. IEEE Electron Device Letters 29 (1) : 80-82. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.910779 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83041 | |
dc.description.abstract | A novel and low-cost spacer removal technique proved successful in further enhancing the IDsat performance of already strained n-channel trigate FinFETs with SiC source and drain (S/D) stressors. This extra enhancement is attributed to increased longitudinal tensile channel stress as a result of increased stress coupling efficiency from the SiC S/D stressors to the channel. The electrical results also establish that this extra enhancement will become even more significant as physical gate lengths are scaled down. © 2008 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2007.910779 | |
dc.source | Scopus | |
dc.subject | FinFET | |
dc.subject | Multiple-gate transistor (MuGFET) | |
dc.subject | Silicon-carbon | |
dc.subject | Spacerless | |
dc.subject | Strain | |
dc.subject | Stress | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2007.910779 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 29 | |
dc.description.issue | 1 | |
dc.description.page | 80-82 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000252098100024 | |
Appears in Collections: | Staff Publications |
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