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Title: Simultaneous magnetic and charge doping of topological insulators with Carbon
Authors: Shen, L. 
Zeng, M. 
Lu, Y. 
Yang, M. 
Feng, Y.P. 
Issue Date: 5-Dec-2013
Citation: Shen, L., Zeng, M., Lu, Y., Yang, M., Feng, Y.P. (2013-12-05). Simultaneous magnetic and charge doping of topological insulators with Carbon. Physical Review Letters 111 (23) : -. ScholarBank@NUS Repository.
Abstract: A two-step doping process, magnetic followed by charge or vice versa, is required to produce massive topological surface states (TSS) in topological insulators for many physics and device applications. Here, we demonstrate simultaneous magnetic and hole doping achieved with a single dopant, carbon, in Bi2Se3 by first-principles calculations. Carbon substitution for Se (CSe) results in an opening of a sizable surface Dirac gap (up to 82 meV), while the Fermi level remains inside the bulk gap and close to the Dirac point at moderate doping concentrations. The strong localization of 2p states of CSe favors spontaneous spin polarization via a p-p interaction and formation of ordered magnetic moments mediated by surface states. Meanwhile, holes are introduced into the system by C Se. This dual function of carbon doping suggests a simple way to realize insulating massive TSS. © 2013 American Physical Society.
Source Title: Physical Review Letters
ISSN: 00319007
DOI: 10.1103/PhysRevLett.111.236803
Appears in Collections:Staff Publications

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