Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/23/1/015012
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dc.titleSimulation and design of a germanium L-shaped impact-ionization MOS transistor
dc.contributor.authorToh, E.-H.
dc.contributor.authorWang, G.H.
dc.contributor.authorChan, L.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:36:20Z
dc.date.available2014-10-07T04:36:20Z
dc.date.issued2008-01-01
dc.identifier.citationToh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C. (2008-01-01). Simulation and design of a germanium L-shaped impact-ionization MOS transistor. Semiconductor Science and Technology 23 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/23/1/015012
dc.identifier.issn02681242
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83025
dc.description.abstractThis paper reports a novel L-shaped impact-ionization MOS (LI-MOS) transistor structure that achieves a subthreshold swing of well below 60 mV/decade at room temperature and operates at a low supply voltage. The device features an L-shaped or an elevated impact-ionization region (I-region), which displaces the hot carrier activity away from the gate dielectric region to improve hot carrier reliability and VT stability problems. Germanium, which has a lower bandgap and impact-ionization threshold energy lower than silicon, is chosen as the material of choice for the LI-MOS transistor structure. Device physics and design principles for the LI-MOS transistor are detailed through extensive two-dimensional device simulations. The LI-MOS transistor exhibits excellent scalability, making it suitable for augmenting the performance of standard CMOS transistors in future technology generations. © 2008 IOP Publishing Ltd.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1088/0268-1242/23/1/015012
dc.description.sourcetitleSemiconductor Science and Technology
dc.description.volume23
dc.description.issue1
dc.description.page-
dc.description.codenSSTEE
dc.identifier.isiut000253279700012
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