Please use this identifier to cite or link to this item: https://doi.org/10.1109/JSTQE.2009.2028657
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dc.titleSilicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization
dc.contributor.authorLiow, T.-Y.
dc.contributor.authorAng, K.-W.
dc.contributor.authorFang, Q.
dc.contributor.authorSong, J.-F.
dc.contributor.authorXiong, Y.-Z.
dc.contributor.authorYu, M.-B.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:36:17Z
dc.date.available2014-10-07T04:36:17Z
dc.date.issued2010-01
dc.identifier.citationLiow, T.-Y., Ang, K.-W., Fang, Q., Song, J.-F., Xiong, Y.-Z., Yu, M.-B., Lo, G.-Q., Kwong, D.-L. (2010-01). Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization. IEEE Journal on Selected Topics in Quantum Electronics 16 (1) : 307-315. ScholarBank@NUS Repository. https://doi.org/10.1109/JSTQE.2009.2028657
dc.identifier.issn1077260X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83020
dc.description.abstractSi modulators and Ge photodetectors are monolithically integrated on Si-on-insulator. The carrier-depletion-type Si modulators achieved high modulation efficiency and speed (VπLπ = 2.56 Vcm, 10 Gb/s). Low-voltage operation (VRF = 1Vpp) was also demonstrated. Introducing a low-thermal-budget postepitaxy anneal improves the performance of the Ge photodetectors, thus resulting in significantly improved dark current. The responsivity and speed in the low-voltage regime are also enhanced, which enhances low-voltage or even short-circuit (VBias = 0 V) operation. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/JSTQE.2009.2028657
dc.sourceScopus
dc.subjectGermanium photodetector
dc.subjectMonolithic integration
dc.subjectSilicon modulator
dc.subjectSilicon photonics
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/JSTQE.2009.2028657
dc.description.sourcetitleIEEE Journal on Selected Topics in Quantum Electronics
dc.description.volume16
dc.description.issue1
dc.description.page307-315
dc.description.codenIJSQE
dc.identifier.isiut000274382900035
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