Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2012.2223821
DC FieldValue
dc.titleSelf-selection unipolar HfOx-Based RRAM
dc.contributor.authorTran, X.A.
dc.contributor.authorZhu, W.
dc.contributor.authorLiu, W.J.
dc.contributor.authorYeo, Y.C.
dc.contributor.authorNguyen, B.Y.
dc.contributor.authorYu, H.Y.
dc.date.accessioned2014-10-07T04:36:09Z
dc.date.available2014-10-07T04:36:09Z
dc.date.issued2013
dc.identifier.citationTran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y. (2013). Self-selection unipolar HfOx-Based RRAM. IEEE Transactions on Electron Devices 60 (1) : 391-395. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2012.2223821
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83008
dc.description.abstractIn this paper, we study the effect of highly doped n+/p + Si as the bottom electrode on unipolar RRAM with Ni-electrode/HfOx structure. With heavily doped p+-Si as the bottom electrode, RRAM devices illustrate the coexistence of the bipolar and the unipolar resistive switching. Meanwhile, by substituting heavily doped ${\rm n}+-Si, the switching behavior changes to that of the self-rectifying unipolar device. The asymmetry and rectifying reproducible behavior in a n+-Si/HfOx/Ni device resulted from the Schottky barrier of defect states in the SiOx/HfOx junction and n+ Si substrate, but this behavior is not seen for the p+-Si bottom electrode case. With rectifying characteristics and high forward current density observed in the Ni/HfOx/n+Si device, the sneak current path in the conventional crossbar architecture was significantly suppressed. We believe that the proposed structure is a promising candidate for future crossbar-type RRAM applications. © 2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2012.2223821
dc.sourceScopus
dc.subjectBipolar
dc.subjecthigh resistance switching (HRS)
dc.subjectlow resistance switching (LRS)
dc.subjectresistive switching (RS)
dc.subjectunipolar
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2012.2223821
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume60
dc.description.issue1
dc.description.page391-395
dc.description.codenIETDA
dc.identifier.isiut000316816200058
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