Please use this identifier to cite or link to this item: https://doi.org/10.1142/S0219581X05003036
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dc.titleSelf-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics
dc.contributor.authorChong, C.C.
dc.contributor.authorZhou, K.H.
dc.contributor.authorBai, P.
dc.contributor.authorLi, Er.P.
dc.contributor.authorSamudra, G.S.
dc.date.accessioned2014-10-07T04:36:07Z
dc.date.available2014-10-07T04:36:07Z
dc.date.issued2005-04
dc.identifier.citationChong, C.C., Zhou, K.H., Bai, P., Li, Er.P., Samudra, G.S. (2005-04). Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectrics. International Journal of Nanoscience 4 (2) : 171-178. ScholarBank@NUS Repository. https://doi.org/10.1142/S0219581X05003036
dc.identifier.issn0219581X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83006
dc.description.abstractFlash memory structure in which a silicon quantum dot embedded in the gate dielectric region between the channel and the control gate is considered. A self-consistent simulation for such memory devices is performed and aims to understand the relationship between the device structure and the meaningful quantities, as required for an efficient device operation. In this study, both the traditional SiO 2 and HfO 2 high-k dielectrics are being explored, and their results are compared and contrasted. In particular, the superiority of HfO 2 over the SiO 2 is demonstrated through various interlocking investigations on the relationships between the tunneling current, dielectric thickness, barrier height, programming and retention times. © World Scientific Publishing Company.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1142/S0219581X05003036
dc.sourceScopus
dc.subjectFlash memory
dc.subjectHigh-k dielectric
dc.subjectProgramming time
dc.subjectQuantum dot
dc.subjectRetention time
dc.subjectTunneling current
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1142/S0219581X05003036
dc.description.sourcetitleInternational Journal of Nanoscience
dc.description.volume4
dc.description.issue2
dc.description.page171-178
dc.identifier.isiut000246301200002
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