Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.3592211
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dc.titleSelf-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
dc.contributor.authorZhang, X.
dc.contributor.authorGuo, H.
dc.contributor.authorLin, H.-Y.
dc.contributor.authorCheng, C.-C.
dc.contributor.authorKo, C.-H.
dc.contributor.authorWann, C.H.
dc.contributor.authorLuo, G.-L.
dc.contributor.authorChang, C.-Y.
dc.contributor.authorChien, C.-H.
dc.contributor.authorHan, Z.-Y.
dc.contributor.authorHuang, S.-C.
dc.contributor.authorChin, H.-C.
dc.contributor.authorGong, X.
dc.contributor.authorKoh, S.-M.
dc.contributor.authorLim, P.S.Y.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:36:05Z
dc.date.available2014-10-07T04:36:05Z
dc.date.issued2011-05
dc.identifier.citationZhang, X., Guo, H., Lin, H.-Y., Cheng, C.-C., Ko, C.-H., Wann, C.H., Luo, G.-L., Chang, C.-Y., Chien, C.-H., Han, Z.-Y., Huang, S.-C., Chin, H.-C., Gong, X., Koh, S.-M., Lim, P.S.Y., Yeo, Y.-C. (2011-05). Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3592211
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83003
dc.description.abstractThe demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was selectively formed on n+ doped gallium arsenide (GaAs) regions by epitaxy. A new self-aligned nickel germanosilicide (NiGeSi) Ohmic contact with good morphology was achieved using a two-step annealing process with precise conversion of the GeSi layer into NiGeSi. NiGeSi contact with the contact resistivity (ρ e) of 1.57 mm and sheet resistance (Rsh) of 2.8/ was achieved. The NiGeSi-based self-aligned contact technology is promising for future integration in high performance III-V MOSFETs. © 2011 American Vacuum Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.3592211
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.3592211
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume29
dc.description.issue3
dc.description.page-
dc.description.codenJVTBD
dc.identifier.isiut000291111300033
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