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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2012.2191760
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dc.titleSelenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts
dc.contributor.authorTong, Y.
dc.contributor.authorLiu, B.
dc.contributor.authorLim, P.S.Y.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:36:04Z
dc.date.available2014-10-07T04:36:04Z
dc.date.issued2012
dc.identifier.citationTong, Y., Liu, B., Lim, P.S.Y., Yeo, Y.-C. (2012). Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts. IEEE Electron Device Letters 33 (6) : 773-775. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2191760
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83002
dc.description.abstractIn this letter, we report the demonstration of an effective electron Schottky barrier height (ΦB n) reduction technology for NiGe/n-type Germanium (n-Ge) contacts using ion implantation of selenium (Se) followed by its segregation at NiGe/n-Ge interface. Se was found to segregate at NiGe/n-Ge interface after germanide formation. Nickel monogermanide was formed using a 350 °C 30-s anneal. Se segregation gives ΦB n as low as ∼ 0.13 eV. © 2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2012.2191760
dc.sourceScopus
dc.subjectNickel germanide (NiGe)
dc.subjectSchottky barrier height
dc.subjectsegregation
dc.subjectselenium implant
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2012.2191760
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume33
dc.description.issue6
dc.description.page773-775
dc.description.codenEDLED
dc.identifier.isiut000305835000011
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