Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2012.2191760
DC FieldValue
dc.titleSelenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts
dc.contributor.authorTong, Y.
dc.contributor.authorLiu, B.
dc.contributor.authorLim, P.S.Y.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:36:04Z
dc.date.available2014-10-07T04:36:04Z
dc.date.issued2012
dc.identifier.citationTong, Y., Liu, B., Lim, P.S.Y., Yeo, Y.-C. (2012). Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts. IEEE Electron Device Letters 33 (6) : 773-775. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2191760
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83002
dc.description.abstractIn this letter, we report the demonstration of an effective electron Schottky barrier height (ΦB n) reduction technology for NiGe/n-type Germanium (n-Ge) contacts using ion implantation of selenium (Se) followed by its segregation at NiGe/n-Ge interface. Se was found to segregate at NiGe/n-Ge interface after germanide formation. Nickel monogermanide was formed using a 350 °C 30-s anneal. Se segregation gives ΦB n as low as ∼ 0.13 eV. © 2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2012.2191760
dc.sourceScopus
dc.subjectNickel germanide (NiGe)
dc.subjectSchottky barrier height
dc.subjectsegregation
dc.subjectselenium implant
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2012.2191760
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume33
dc.description.issue6
dc.description.page773-775
dc.description.codenEDLED
dc.identifier.isiut000305835000011
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

35
checked on May 17, 2022

WEB OF SCIENCETM
Citations

38
checked on May 17, 2022

Page view(s)

186
checked on May 12, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.