Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2724776
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dc.titleSaturated dot density of InAs/GaAs self-assembled quantum dots grown at high growth rate
dc.contributor.authorChia, C.K.
dc.contributor.authorZhang, Y.W.
dc.contributor.authorWong, S.S.
dc.contributor.authorYong, A.M.
dc.contributor.authorChow, S.Y.
dc.contributor.authorChua, S.J.
dc.contributor.authorGuo, J.
dc.date.accessioned2014-10-07T04:35:58Z
dc.date.available2014-10-07T04:35:58Z
dc.date.issued2007
dc.identifier.citationChia, C.K., Zhang, Y.W., Wong, S.S., Yong, A.M., Chow, S.Y., Chua, S.J., Guo, J. (2007). Saturated dot density of InAs/GaAs self-assembled quantum dots grown at high growth rate. Applied Physics Letters 90 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2724776
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82993
dc.description.abstractThe variation in dot density, dot size, and photoluminescence intensity in two series of 1.8 and 2.5 ML InAs quantum dots (QDs) as a function of InAs growth rate has been investigated. As the growth rate increases from 0.14 to 3.60 ML/s, the average dot lateral size reduces by half, whereas the dot density increases five times. Nonlinear relationships were observed between dot density, dot size, and growth rate. The dot density is found to saturate at a growth rate of 3 ML/s. High dot density of 7.76 × 1011 cm -2 has been demonstrated and is beneficial for applications in high power QD devices © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2724776
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.2724776
dc.description.sourcetitleApplied Physics Letters
dc.description.volume90
dc.description.issue16
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000245870400037
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