Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2004.827367
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dc.titleRF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
dc.contributor.authorDing, S.-J.
dc.contributor.authorHu, H.
dc.contributor.authorZhu, C.
dc.contributor.authorKim, S.J.
dc.contributor.authorYu, X.
dc.contributor.authorLi, M.-F.
dc.contributor.authorCho, B.J.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorYu, M.B.
dc.contributor.authorRustagi, S.C.
dc.contributor.authorChin, A.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:35:51Z
dc.date.available2014-10-07T04:35:51Z
dc.date.issued2004-06
dc.identifier.citationDing, S.-J., Hu, H., Zhu, C., Kim, S.J., Yu, X., Li, M.-F., Cho, B.J., Chan, D.S.H., Yu, M.B., Rustagi, S.C., Chin, A., Kwong, D.-L. (2004-06). RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications. IEEE Transactions on Electron Devices 51 (6) : 886-894. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2004.827367
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82983
dc.description.abstractHigh-performance metal-insulator-metal capacitors using atomic layer-deposited HfO2-Al2O3 laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF/μm2) up to 20 GHz, low leakage current of 4.9 × 10-8 A/cm2 at 2 V and 125°C, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (α) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2004.827367
dc.sourceScopus
dc.subjectAtomic layer-deposit (ALD)
dc.subjectHfO2-Al2O3 laminate
dc.subjectMetal-insulator-metal (MIM) capacitor
dc.subjectRadio frequency (RF)
dc.subjectReliability
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2004.827367
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume51
dc.description.issue6
dc.description.page886-894
dc.description.codenIETDA
dc.identifier.isiut000221660100009
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