Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/18/1/305
DC FieldValue
dc.titleReliability of ultrathin (
dc.contributor.authorSamanta, S.K.
dc.contributor.authorChatterjee, S.
dc.contributor.authorChoi, W.K.
dc.contributor.authorBera, L.K.
dc.contributor.authorBanerjee, H.D.
dc.contributor.authorMaiti, C.K.
dc.date.accessioned2014-10-07T04:35:45Z
dc.date.available2014-10-07T04:35:45Z
dc.date.issued2003-01
dc.identifier.citationSamanta, S.K., Chatterjee, S., Choi, W.K., Bera, L.K., Banerjee, H.D., Maiti, C.K. (2003-01). Reliability of ultrathin (. Semiconductor Science and Technology 18 (1) : 33-38. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/18/1/305
dc.identifier.issn02681242
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82976
dc.description.abstractThe reliability of ultrathin oxides on strained SiGe heterolayers was discussed. The effects of nitrogen (N2)-annealing on the electrical properties and reliability of the nitrogen oxide (N2O)-grown oxynitrides were also examined. The results showed that the thermal stability of the lattice structure of SiGe was preserved for 800-950 °C oxidation.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1088/0268-1242/18/1/305
dc.description.sourcetitleSemiconductor Science and Technology
dc.description.volume18
dc.description.issue1
dc.description.page33-38
dc.description.codenSSTEE
dc.identifier.isiut000180607100008
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