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Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2137329
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dc.titleRapid thermal oxidation of Ge-rich Si1-xGex heterolayers
dc.contributor.authorBera, M.K.
dc.contributor.authorChakraborty, S.
dc.contributor.authorDas, R.
dc.contributor.authorDalapati, G.K.
dc.contributor.authorChattopadhyay, S.
dc.contributor.authorSamanta, S.K.
dc.contributor.authorYoo, W.J.
dc.contributor.authorChakraborty, A.K.
dc.contributor.authorButenko, Y.
dc.contributor.authorŠiller, L.
dc.contributor.authorHunt, M.R.C.
dc.contributor.authorSaha, S.
dc.contributor.authorMaiti, C.K.
dc.date.accessioned2014-10-07T04:35:38Z
dc.date.available2014-10-07T04:35:38Z
dc.date.issued2006-01
dc.identifier.citationBera, M.K., Chakraborty, S., Das, R., Dalapati, G.K., Chattopadhyay, S., Samanta, S.K., Yoo, W.J., Chakraborty, A.K., Butenko, Y., Šiller, L., Hunt, M.R.C., Saha, S., Maiti, C.K. (2006-01). Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 24 (1) : 84-90. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2137329
dc.identifier.issn07342101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82967
dc.description.abstractRapid thermal oxidation (RTO) of the Ge-rich (x=0.7) Si1-x Gex heterolayer is reported. In particular, the structural modifications of SiGe films during oxidation process and the dependence of the oxidation kinetics on Ge content, oxidation temperature, and oxide thickness have been studied. The segregation mechanism of Ge at the oxideSiGe interface is discussed. Interface properties of the RTO-grown oxides studied using high-frequency capacitance-voltage (C-V) characteristics of metal-oxide-semiconductor capacitors are also reported.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.2137329
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.2137329
dc.description.sourcetitleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
dc.description.volume24
dc.description.issue1
dc.description.page84-90
dc.description.codenJVTAD
dc.identifier.isiut000234814100013
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