Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/82965
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dc.titleRandom telegraphic signals and low-frequency noise in rapid-thermal-annealed silicon-silicon oxide structures
dc.contributor.authorChim, W.K.
dc.contributor.authorLeong, K.K.
dc.contributor.authorChoi, W.K.
dc.date.accessioned2014-10-07T04:35:37Z
dc.date.available2014-10-07T04:35:37Z
dc.date.issued2001-01
dc.identifier.citationChim, W.K.,Leong, K.K.,Choi, W.K. (2001-01). Random telegraphic signals and low-frequency noise in rapid-thermal-annealed silicon-silicon oxide structures. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (1) : 1-6. ScholarBank@NUS Repository.
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82965
dc.description.abstractRandom telegraphic signals (RTSs) were observed in aluminium-silicon oxide-silicon (Al-SiO2-Si) metal-oxide-semiconductor capacitors with large contact areas of about 7.85 × 10-3 cm2, which have been subjected to rapid thermal annealing (RTA) in an argon ambient at 600 to 700°C for 50 s. The RTSs change from a two-level RTS to a multilevel RTS as the device bias voltage or temperature is increased. Samples showing RTSs generally exhibit low breakdown voltages and show a Lorentzian spectrum at a frequency between 30 to 400 Hz. Furthermore, the interface-state density from samples exhibiting RTSs is generally higher than that from samples that do not show any RTSs. We suggest that the RTA process over a specific temperature range has produced weak spots in the devices. The filling and emptying processes of a trap near a weak spot modulate the barrier height, resulting in the RTS and the Lorentzian spectrum observed in these devices.
dc.sourceScopus
dc.subjectC-V measurement
dc.subjectFlicker noise
dc.subjectFTIR
dc.subjectInterface state
dc.subjectMOS capacitor
dc.subjectOxide fixed charge
dc.subjectRandom telegraphic signal
dc.subjectRapid thermal annealing
dc.subjectSilicon dioxide
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
dc.description.volume40
dc.description.issue1
dc.description.page1-6
dc.description.codenJAPND
dc.identifier.isiutNOT_IN_WOS
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