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|Title:||Random telegraphic signals and low-frequency noise in rapid-thermal-annealed silicon-silicon oxide structures||Authors:||Chim, W.K.
Oxide fixed charge
Random telegraphic signal
Rapid thermal annealing
|Issue Date:||Jan-2001||Citation:||Chim, W.K.,Leong, K.K.,Choi, W.K. (2001-01). Random telegraphic signals and low-frequency noise in rapid-thermal-annealed silicon-silicon oxide structures. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (1) : 1-6. ScholarBank@NUS Repository.||Abstract:||Random telegraphic signals (RTSs) were observed in aluminium-silicon oxide-silicon (Al-SiO2-Si) metal-oxide-semiconductor capacitors with large contact areas of about 7.85 × 10-3 cm2, which have been subjected to rapid thermal annealing (RTA) in an argon ambient at 600 to 700°C for 50 s. The RTSs change from a two-level RTS to a multilevel RTS as the device bias voltage or temperature is increased. Samples showing RTSs generally exhibit low breakdown voltages and show a Lorentzian spectrum at a frequency between 30 to 400 Hz. Furthermore, the interface-state density from samples exhibiting RTSs is generally higher than that from samples that do not show any RTSs. We suggest that the RTA process over a specific temperature range has produced weak spots in the devices. The filling and emptying processes of a trap near a weak spot modulate the barrier height, resulting in the RTS and the Lorentzian spectrum observed in these devices.||Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/82965||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
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