Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.880640
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dc.titleRandom telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body
dc.contributor.authorLim, Y.F.
dc.contributor.authorXiong, Y.Z.
dc.contributor.authorSingh, N.
dc.contributor.authorYang, R.
dc.contributor.authorJiang, Y.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorBera, L.K.
dc.contributor.authorLo, G.Q.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:35:36Z
dc.date.available2014-10-07T04:35:36Z
dc.date.issued2006-09
dc.identifier.citationLim, Y.F., Xiong, Y.Z., Singh, N., Yang, R., Jiang, Y., Chan, D.S.H., Loh, W.Y., Bera, L.K., Lo, G.Q., Balasubramanian, N., Kwong, D.-L. (2006-09). Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body. IEEE Electron Device Letters 27 (9) : 765-768. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.880640
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82964
dc.description.abstractFor the first time, the random telegraph signal (RTS) and its corresponding flicker noise (1/f) were investigated in gate-all-around p-type Si-FinFETs. For a device with gate width of ∼ 100 nm (fin height) and length of ∼ 200 nm, the typical RTS capture/emission time constants were ∼ 0.1-1 ms. Very large RTS amplitudes (ΔId/Id up to 25%) were observed, which is an effect attributable to the extreme device scaling and/or interface quality of FinFETs. The estimated scattering coefficients (α ∼ 10-12 - 10-13) are found to be higher than typical values obtained from MOSFETs. These findings demonstrate the relevance of RTS for FinFET operation. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2006.880640
dc.sourceScopus
dc.subjectFinFET
dc.subjectFlicker (1/f) noise
dc.subjectGate-all-around (GAA)
dc.subjectNoise
dc.subjectRandom telegraph signals (RTS)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2006.880640
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume27
dc.description.issue9
dc.description.page765-768
dc.description.codenEDLED
dc.identifier.isiut000240008800019
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