Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body

Abstract

For the first time, the random telegraph signal (RTS) and its corresponding flicker noise (1/f) were investigated in gate-all-around p-type Si-FinFETs. For a device with gate width of ∼ 100 nm (fin height) and length of ∼ 200 nm, the typical RTS capture/emission time constants were ∼ 0.1-1 ms. Very large RTS amplitudes (ΔId/Id up to 25%) were observed, which is an effect attributable to the extreme device scaling and/or interface quality of FinFETs. The estimated scattering coefficients (α ∼ 10-12 - 10-13) are found to be higher than typical values obtained from MOSFETs. These findings demonstrate the relevance of RTS for FinFET operation. © 2006 IEEE.