Please use this identifier to cite or link to this item:
https://doi.org/10.1016/S0928-4931(01)00288-0
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dc.title | Raman and photoluminescence characterization of Ge nanocrystals in co-sputtered Ge + SiO2 system | |
dc.contributor.author | Choi, W.K | |
dc.contributor.author | Ng, V. | |
dc.contributor.author | Ho, Y.W | |
dc.contributor.author | Ng, S.P | |
dc.contributor.author | Chen, T.B | |
dc.contributor.author | Yu, M.B | |
dc.contributor.author | Rusli | |
dc.contributor.author | Yoon, S.F | |
dc.contributor.author | Cheong, B.A | |
dc.contributor.author | Chen, G.L | |
dc.date.accessioned | 2014-10-07T04:35:30Z | |
dc.date.available | 2014-10-07T04:35:30Z | |
dc.date.issued | 2001-10-20 | |
dc.identifier.citation | Choi, W.K, Ng, V., Ho, Y.W, Ng, S.P, Chen, T.B, Yu, M.B, Rusli, Yoon, S.F, Cheong, B.A, Chen, G.L (2001-10-20). Raman and photoluminescence characterization of Ge nanocrystals in co-sputtered Ge + SiO2 system. Materials Science and Engineering C 16 (1-2) : 135-138. ScholarBank@NUS Repository. https://doi.org/10.1016/S0928-4931(01)00288-0 | |
dc.identifier.issn | 09284931 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82956 | |
dc.description.abstract | Raman and photoluminescence (PL) results of Ge nanocrystals prepared from co-sputtered Ge + SiO2 samples under rapid-thermal annealling (RTA) with different annealing conditions are presented. The Raman results showed a transition from amorphous to nanocrystalline Ge when the samples were annealed at a temperature higher than 700 °C for longer than 300 s. The Raman spectrum of sample annealed at 1000 °C is very similar to that of the as-deposited amorphous sample. However, when the annealing duration is reduced to less than 50 s, clear Raman signals can be seen for samples annealed at 1000 °C. Transmission electron micrographs showed that uniform Ge nanocrystals were obtained for samples annealed at 800 °C for 300 s or 1000 °C for 50 s, and nanocrystals with multiple twinned structure (of diameter ~ 200 Å) were observed near the Si-SiO2 interface (1000 °C for 300 s). PL results showed that maximum intensity of the 1.9 and 3.0 eV peaks was obtained from samples annealed at 800 °C for 20 s or transiently to 1000 °C at 30 °C/s. These results suggest that a critical thermal budget is required for the formation of uniform nanocrystals and for maximum PL emission. © 2001 Elsevier Science B.V. All rights reserved. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0928-4931(01)00288-0 | |
dc.source | Scopus | |
dc.subject | Ge nanocrystals | |
dc.subject | Photoluminescence | |
dc.subject | Raman | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1016/S0928-4931(01)00288-0 | |
dc.description.sourcetitle | Materials Science and Engineering C | |
dc.description.volume | 16 | |
dc.description.issue | 1-2 | |
dc.description.page | 135-138 | |
dc.identifier.isiut | 000171736900027 | |
Appears in Collections: | Staff Publications |
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