Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.974756
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dc.titleQuasi-two-dimensional transmission line model (QTD-TLM) for planar ohmic contact studies
dc.contributor.authorChor, E.F.
dc.contributor.authorLerdworatawee, J.
dc.date.accessioned2014-10-07T04:35:29Z
dc.date.available2014-10-07T04:35:29Z
dc.date.issued2002-01
dc.identifier.citationChor, E.F., Lerdworatawee, J. (2002-01). Quasi-two-dimensional transmission line model (QTD-TLM) for planar ohmic contact studies. IEEE Transactions on Electron Devices 49 (1) : 105-111. ScholarBank@NUS Repository. https://doi.org/10.1109/16.974756
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82954
dc.description.abstractAn analytical quasi-two-dimensional transmission line model (QTD-TLM) has been formulated to more accurately extract the specific contact resistance (ρ c) of ohmic contacts than the conventional one-dimensional TLM (1D-TLM). Similar to 1D-TLM, the extraction of ρ c using QTD-TLD is straightforward. By means of the conformal mapping technique, the two-dimensional (2-D) (or lateral) current flow and current crowding, owing to the presence of a gap between the TLM mesa and contacts, are jointly incorporated into our model using a single shunt resistor. QTD-TLM is generalized as it is applicable to a variety of contact dimensions and gap widths, and to both alloyed and nonalloyed contacts. The validity of QTD-TLM has been verified experimentally using two alloyed and two nonalloyed ohmic contacts, and by comparison with results from a 2-D numerical model.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/16.974756
dc.sourceScopus
dc.subjectContact resistance
dc.subjectOhmic contacts
dc.subjectSpecific contact resistance
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/16.974756
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume49
dc.description.issue1
dc.description.page105-111
dc.description.codenIETDA
dc.identifier.isiut000173338000017
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