Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.920275
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dc.titlePulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration
dc.contributor.authorKoh, A.T.-Y.
dc.contributor.authorLee, R.T.-P.
dc.contributor.authorLiu, F.-Y.
dc.contributor.authorLiow, T.-Y.
dc.contributor.authorTan, K.M.
dc.contributor.authorWang, X.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorChi, D.-Z.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:35:23Z
dc.date.available2014-10-07T04:35:23Z
dc.date.issued2008-05
dc.identifier.citationKoh, A.T.-Y., Lee, R.T.-P., Liu, F.-Y., Liow, T.-Y., Tan, K.M., Wang, X., Samudra, G.S., Balasubramanian, N., Chi, D.-Z., Yeo, Y.-C. (2008-05). Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration. IEEE Electron Device Letters 29 (5) : 464-467. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920275
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82945
dc.description.abstractWe report for the first time, the use of pulsed laser annealing (PLA) on multiple-gate field-effect transistors (MuGFETs) with silicon-carbon (Si1-xCx) source and drain (S/D) for enhanced dopant activation and improved strain effects. Si1-x Cx S/D exposed to consecutive laser irradiations demonstrated superior dopant activation with a ∼60% reduction in resistivity compared to rapid thermal annealed S/D. In addition, with the application of PLA on epitaxially grown Si0.99C 0.01, substitutional carbon concentration Csub increased from 1.0% (as grown) to 1.21%. This is also significantly higher than the Csub of 0.71% for rapid thermal annealed Si0.99 C0.01 S/D. With a higher strain and enhanced dopant activation, MuGFETs with laser annealed Si0.99C 0.01 S/D show a ∼53% drain-current improvement compared to MuGFETs with rapid thermal annealed Si0.99C0.01 S/D. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.920275
dc.sourceScopus
dc.subjectLaser anneal
dc.subjectMobility
dc.subjectSeries resistance
dc.subjectSilicon-carbon
dc.subjectStrain
dc.subjectTransistors
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2008.920275
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue5
dc.description.page464-467
dc.description.codenEDLED
dc.identifier.isiut000255317400014
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