Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2008.920275
DC Field | Value | |
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dc.title | Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration | |
dc.contributor.author | Koh, A.T.-Y. | |
dc.contributor.author | Lee, R.T.-P. | |
dc.contributor.author | Liu, F.-Y. | |
dc.contributor.author | Liow, T.-Y. | |
dc.contributor.author | Tan, K.M. | |
dc.contributor.author | Wang, X. | |
dc.contributor.author | Samudra, G.S. | |
dc.contributor.author | Balasubramanian, N. | |
dc.contributor.author | Chi, D.-Z. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:35:23Z | |
dc.date.available | 2014-10-07T04:35:23Z | |
dc.date.issued | 2008-05 | |
dc.identifier.citation | Koh, A.T.-Y., Lee, R.T.-P., Liu, F.-Y., Liow, T.-Y., Tan, K.M., Wang, X., Samudra, G.S., Balasubramanian, N., Chi, D.-Z., Yeo, Y.-C. (2008-05). Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration. IEEE Electron Device Letters 29 (5) : 464-467. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920275 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82945 | |
dc.description.abstract | We report for the first time, the use of pulsed laser annealing (PLA) on multiple-gate field-effect transistors (MuGFETs) with silicon-carbon (Si1-xCx) source and drain (S/D) for enhanced dopant activation and improved strain effects. Si1-x Cx S/D exposed to consecutive laser irradiations demonstrated superior dopant activation with a ∼60% reduction in resistivity compared to rapid thermal annealed S/D. In addition, with the application of PLA on epitaxially grown Si0.99C 0.01, substitutional carbon concentration Csub increased from 1.0% (as grown) to 1.21%. This is also significantly higher than the Csub of 0.71% for rapid thermal annealed Si0.99 C0.01 S/D. With a higher strain and enhanced dopant activation, MuGFETs with laser annealed Si0.99C 0.01 S/D show a ∼53% drain-current improvement compared to MuGFETs with rapid thermal annealed Si0.99C0.01 S/D. © 2008 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.920275 | |
dc.source | Scopus | |
dc.subject | Laser anneal | |
dc.subject | Mobility | |
dc.subject | Series resistance | |
dc.subject | Silicon-carbon | |
dc.subject | Strain | |
dc.subject | Transistors | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2008.920275 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 29 | |
dc.description.issue | 5 | |
dc.description.page | 464-467 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000255317400014 | |
Appears in Collections: | Staff Publications |
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