Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode

Abstract

Schottky source/drain (S/D) transistors using Pt-germanide and HfO2/TaN gate stack are fabricated on Ge-substrate with conventional self-aligned top-gate process. It was found that Pt-germanide provides promising properties for p-MOSFET: negative effective hole barrier height, low resistivity, atomically sharp junction with Ge with good morphology. Pt-germanide Ge-p-MOSFETs showed well-behaved ID-VD characteristics and much suppressed Ioff compared to Ni-germanide and conventional heavily doped S/D MOSFETs. © 2006 IEEE.