Please use this identifier to cite or link to this item:
https://doi.org/10.1109/JPHOTOV.2013.2270350
DC Field | Value | |
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dc.title | Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks | |
dc.contributor.author | Duttagupta, S. | |
dc.contributor.author | Ma, F.-J. | |
dc.contributor.author | Lin, S.F. | |
dc.contributor.author | Mueller, T. | |
dc.contributor.author | Aberle, A.G. | |
dc.contributor.author | Hoex, B. | |
dc.date.accessioned | 2014-10-07T04:35:17Z | |
dc.date.available | 2014-10-07T04:35:17Z | |
dc.date.issued | 2013 | |
dc.identifier.citation | Duttagupta, S., Ma, F.-J., Lin, S.F., Mueller, T., Aberle, A.G., Hoex, B. (2013). Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks. IEEE Journal of Photovoltaics 3 (4) : 1163-1169. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2013.2270350 | |
dc.identifier.issn | 21563381 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82937 | |
dc.description.abstract | We report an outstanding level of surface passivation for both n + and p+ silicon by AlO x/SiNx dielectric stacks deposited in an inline plasma-enhanced chemical vapor deposition (PECVD) reactor for a wide range of sheet resistances. Extremely low emitter saturation current densities (J-{0e}) of 12 and 200 fA/cm2 are obtained on 165 and 25 Ω/sq n+ emitters, respectively, and 8 and 45 fA/cm2 on 170 and 30 Ω/sq p + emitters, respectively. Using contactless corona-voltage measurements and device simulations, we demonstrate that the surface passivation mechanism on both n+ and p+ silicon is primarily due to a relatively low interface defect density of | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/JPHOTOV.2013.2270350 | |
dc.source | Scopus | |
dc.subject | Aluminum oxide/silicon nitride (AlOx/SiN x) stacks | |
dc.subject | boron-doped emitters | |
dc.subject | crystalline silicon | |
dc.subject | phosphorus-doped emitters | |
dc.subject | plasma-enhanced chemical vapor deposition (PECVD) | |
dc.subject | surface passivation | |
dc.type | Article | |
dc.contributor.department | SOLAR ENERGY RESEARCH INST OF S'PORE | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/JPHOTOV.2013.2270350 | |
dc.description.sourcetitle | IEEE Journal of Photovoltaics | |
dc.description.volume | 3 | |
dc.description.issue | 4 | |
dc.description.page | 1163-1169 | |
dc.identifier.isiut | 000324881400006 | |
Appears in Collections: | Staff Publications |
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