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dc.titleProgress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks
dc.contributor.authorDuttagupta, S.
dc.contributor.authorMa, F.-J.
dc.contributor.authorLin, S.F.
dc.contributor.authorMueller, T.
dc.contributor.authorAberle, A.G.
dc.contributor.authorHoex, B.
dc.identifier.citationDuttagupta, S., Ma, F.-J., Lin, S.F., Mueller, T., Aberle, A.G., Hoex, B. (2013). Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks. IEEE Journal of Photovoltaics 3 (4) : 1163-1169. ScholarBank@NUS Repository.
dc.description.abstractWe report an outstanding level of surface passivation for both n + and p+ silicon by AlO x/SiNx dielectric stacks deposited in an inline plasma-enhanced chemical vapor deposition (PECVD) reactor for a wide range of sheet resistances. Extremely low emitter saturation current densities (J-{0e}) of 12 and 200 fA/cm2 are obtained on 165 and 25 Ω/sq n+ emitters, respectively, and 8 and 45 fA/cm2 on 170 and 30 Ω/sq p + emitters, respectively. Using contactless corona-voltage measurements and device simulations, we demonstrate that the surface passivation mechanism on both n+ and p+ silicon is primarily due to a relatively low interface defect density of
dc.subjectAluminum oxide/silicon nitride (AlOx/SiN x) stacks
dc.subjectboron-doped emitters
dc.subjectcrystalline silicon
dc.subjectphosphorus-doped emitters
dc.subjectplasma-enhanced chemical vapor deposition (PECVD)
dc.subjectsurface passivation
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleIEEE Journal of Photovoltaics
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