Please use this identifier to cite or link to this item: https://doi.org/10.1021/nl4041516
DC FieldValue
dc.titleProfiling nanowire thermal resistance with a spatial resolution of nanometers
dc.contributor.authorLiu, D.
dc.contributor.authorXie, R.
dc.contributor.authorYang, N.
dc.contributor.authorLi, B.
dc.contributor.authorThong, J.T.L.
dc.date.accessioned2014-10-07T04:35:16Z
dc.date.available2014-10-07T04:35:16Z
dc.date.issued2014-02-12
dc.identifier.citationLiu, D., Xie, R., Yang, N., Li, B., Thong, J.T.L. (2014-02-12). Profiling nanowire thermal resistance with a spatial resolution of nanometers. Nano Letters 14 (2) : 806-812. ScholarBank@NUS Repository. https://doi.org/10.1021/nl4041516
dc.identifier.issn15306984
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82936
dc.description.abstractWe report a new technique to profile the thermal resistance along a nanowire with a spatial resolution of better than 20 nm. Using this technique, we mapped the thermal conductivity along a Si0.7Ge 0.3/NiSi0.7Ge0.3 heterostructured nanowire. We also measured the interfacial thermal resistance (ITR) across the Si/NiSi 2 interface embedded in Si/NiSi2 heterostructured nanowires. The ITR does not change even for adjacent interfaces as close as ∼50 atomic layers. © 2014 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nl4041516
dc.sourceScopus
dc.subjectelectron beam heating
dc.subjectnanoscale thermal transport
dc.subjectnanostructures
dc.subjectnanowires
dc.subjectThermal conductance
dc.subjectthermal measurement
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1021/nl4041516
dc.description.sourcetitleNano Letters
dc.description.volume14
dc.description.issue2
dc.description.page806-812
dc.description.codenNALEF
dc.identifier.isiut000331343900063
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