Please use this identifier to cite or link to this item: https://doi.org/10.1039/c1nr10856e
DC FieldValue
dc.titleProbing the morphology-device relation of Fe 2O 3 nanostructures towards photovoltaic and sensing applications
dc.contributor.authorAgarwala, S.
dc.contributor.authorLim, Z.H.
dc.contributor.authorNicholson, E.
dc.contributor.authorHo, G.W.
dc.date.accessioned2014-10-07T04:35:14Z
dc.date.available2014-10-07T04:35:14Z
dc.date.issued2012-01-07
dc.identifier.citationAgarwala, S., Lim, Z.H., Nicholson, E., Ho, G.W. (2012-01-07). Probing the morphology-device relation of Fe 2O 3 nanostructures towards photovoltaic and sensing applications. Nanoscale 4 (1) : 194-205. ScholarBank@NUS Repository. https://doi.org/10.1039/c1nr10856e
dc.identifier.issn20403364
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82933
dc.description.abstractA lot of research on nanomaterials has been carried out in recent years. However, there is still a lack of nanostructures that have a combination of superior properties; both efficient electron transport and high surface area. Here, the authors have tried to develop hybrid α-Fe 2O 3 flower-like morphology which exhibits both superior electron transport and high surface area. Intrigued by the unique properties of Fe 2O 3 at the nanoscale and its abundance in nature, we have demonstrated a facile template-free solution based synthesis of hybrid α-Fe 2O 3 comprising nanopetals nucleating radially from a 3D core. Due to its simplicity, the synthesis process can be easily reproduced and scaled up. We carried out in-depth studies on gas sensing and dye-sensitized solar cell (DSSC) device characterization so as to gain an understanding of how surface area and transport properties are affected by variation in morphology. The hybrid α-Fe 2O 3 nanostructures are studied as potential candidates for gas sensors and for the first time as a working electrode for DSSC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1039/c1nr10856e
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentMATHEMATICS
dc.description.doi10.1039/c1nr10856e
dc.description.sourcetitleNanoscale
dc.description.volume4
dc.description.issue1
dc.description.page194-205
dc.identifier.isiut000297848500027
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