Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1471377
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dc.titlePressure-induced resonant Raman scattering in Ge/Si islands
dc.contributor.authorTeo, K.L.
dc.contributor.authorQin, L.
dc.contributor.authorShen, Z.X.
dc.contributor.authorSchmidt, O.G.
dc.date.accessioned2014-10-07T04:35:10Z
dc.date.available2014-10-07T04:35:10Z
dc.date.issued2002-04-22
dc.identifier.citationTeo, K.L., Qin, L., Shen, Z.X., Schmidt, O.G. (2002-04-22). Pressure-induced resonant Raman scattering in Ge/Si islands. Applied Physics Letters 80 (16) : 2919-2921. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1471377
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82927
dc.description.abstractSelf-assembled Ge islands grown by solid-source molecular-beam epitaxy were investigated by resonant Raman scattering under hydrostatic pressure at room temperature. We utilize the effect of pressure to tune the electronic transition through laser excitation energies in the Ge islands. The pressure coefficient of this resonating electronic transition thus obtained is ∼2.7±0. 5meV/kbar, which is significantly smaller than the pressure shift of the E l transition in bulk Ge. This is attributed to the fact that the Ge islands are strongly constrained by the surrounding Si lattice, leading to a smaller deformation as compared to the bulk Ge, when subjected to the same pressure. © 2002 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1471377
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1471377
dc.description.sourcetitleApplied Physics Letters
dc.description.volume80
dc.description.issue16
dc.description.page2919-2921
dc.description.codenAPPLA
dc.identifier.isiut000175068900034
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