Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2010.03.106
DC FieldValue
dc.titlePhysical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser deposition
dc.contributor.authorTian, F.
dc.contributor.authorChor, E.F.
dc.date.accessioned2014-10-07T04:34:50Z
dc.date.available2014-10-07T04:34:50Z
dc.date.issued2010-10-01
dc.identifier.citationTian, F., Chor, E.F. (2010-10-01). Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser deposition. Thin Solid Films 518 (24 SUPPL.) : e121-e124. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2010.03.106
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82902
dc.description.abstractPhysical and electrical characteristics of hafnium oxide (HfO2) films grown by pulsed laser deposition (PLD) technique and their application in AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors (MIS-HFETs) have been investigated. The PLD-grown amorphous HfO2 films exhibit good constituent uniformity and stoichiometry. The conduction band offset for HfO2/GaN heterostructure is evaluated to be 1.7 eV. The dielectric constant of HfO2 is estimated as ∼ 20 and the effective oxide charge density is ∼ 8.9 × 1011 cm - 2. The fabricated PLD-grown HfO2 MIS-HFETs show a much better electrical performance than the conventional Schottky gate-HFETs, including a larger maximum drain current (31.5%), larger gate voltage swing (8.5%), smaller gate leakage current (two orders of magnitude), and smaller degradation rate at an elevated temperature operation. © 2010 Elsevier B.V.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2010.03.106
dc.sourceScopus
dc.subjectAlGaN/GaN
dc.subjectHafnium oxide (HfO2)
dc.subjectHeterostructure field effect transistors (HFETs)
dc.subjectPulsed laser deposition (PLD)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.tsf.2010.03.106
dc.description.sourcetitleThin Solid Films
dc.description.volume518
dc.description.issue24 SUPPL.
dc.description.pagee121-e124
dc.description.codenTHSFA
dc.identifier.isiut000295942000032
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

7
checked on Apr 12, 2021

WEB OF SCIENCETM
Citations

8
checked on Apr 12, 2021

Page view(s)

88
checked on Apr 12, 2021

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.