Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.tsf.2010.03.106
DC Field | Value | |
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dc.title | Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser deposition | |
dc.contributor.author | Tian, F. | |
dc.contributor.author | Chor, E.F. | |
dc.date.accessioned | 2014-10-07T04:34:50Z | |
dc.date.available | 2014-10-07T04:34:50Z | |
dc.date.issued | 2010-10-01 | |
dc.identifier.citation | Tian, F., Chor, E.F. (2010-10-01). Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser deposition. Thin Solid Films 518 (24 SUPPL.) : e121-e124. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2010.03.106 | |
dc.identifier.issn | 00406090 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82902 | |
dc.description.abstract | Physical and electrical characteristics of hafnium oxide (HfO2) films grown by pulsed laser deposition (PLD) technique and their application in AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors (MIS-HFETs) have been investigated. The PLD-grown amorphous HfO2 films exhibit good constituent uniformity and stoichiometry. The conduction band offset for HfO2/GaN heterostructure is evaluated to be 1.7 eV. The dielectric constant of HfO2 is estimated as ∼ 20 and the effective oxide charge density is ∼ 8.9 × 1011 cm - 2. The fabricated PLD-grown HfO2 MIS-HFETs show a much better electrical performance than the conventional Schottky gate-HFETs, including a larger maximum drain current (31.5%), larger gate voltage swing (8.5%), smaller gate leakage current (two orders of magnitude), and smaller degradation rate at an elevated temperature operation. © 2010 Elsevier B.V. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2010.03.106 | |
dc.source | Scopus | |
dc.subject | AlGaN/GaN | |
dc.subject | Hafnium oxide (HfO2) | |
dc.subject | Heterostructure field effect transistors (HFETs) | |
dc.subject | Pulsed laser deposition (PLD) | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1016/j.tsf.2010.03.106 | |
dc.description.sourcetitle | Thin Solid Films | |
dc.description.volume | 518 | |
dc.description.issue | 24 SUPPL. | |
dc.description.page | e121-e124 | |
dc.description.coden | THSFA | |
dc.identifier.isiut | 000295942000032 | |
Appears in Collections: | Staff Publications |
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