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Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.3584823
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dc.titlePhase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction
dc.contributor.authorFang, L.W.-W.
dc.contributor.authorZhao, R.
dc.contributor.authorLim, K.-G.
dc.contributor.authorYang, H.
dc.contributor.authorShi, L.
dc.contributor.authorChong, T.-C.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:34:38Z
dc.date.available2014-10-07T04:34:38Z
dc.date.issued2011-05
dc.identifier.citationFang, L.W.-W., Zhao, R., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C. (2011-05). Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3584823
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82885
dc.description.abstractA phase change memory device integrated with a nickel monosilicide (NiSi) bottom electrode and a dielectric (Ta2 O5) interlayer was investigated. The presence of a low thermal conductivity thin film between the bottom electrode and phase change layer promotes heating efficiency in the device. Reset voltages down to 2.2 and 1.86 V could be achieved for memory device without and with the Ta2 O5 interlayer, respectively. In addition, low reset current of 0.66 mA and SET current of 0.2 mA were obtained for devices with Ta2 O5 interlayer having a contact dimension of ∼1 μm. Endurance of the devices was also studied. © 2011 American Vacuum Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.3584823
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.3584823
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume29
dc.description.issue3
dc.description.page-
dc.description.codenJVTBD
dc.identifier.isiut000291111300031
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