Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2010723
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dc.titlePerformance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
dc.contributor.authorTan, K.-M.
dc.contributor.authorYang, M.
dc.contributor.authorFang, W.-W.
dc.contributor.authorLim, A.E.-J.
dc.contributor.authorLee, R.T.-P.
dc.contributor.authorLiow, T.-Y.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:34:29Z
dc.date.available2014-10-07T04:34:29Z
dc.date.issued2009
dc.identifier.citationTan, K.-M., Yang, M., Fang, W.-W., Lim, A.E.-J., Lee, R.T.-P., Liow, T.-Y., Yeo, Y.-C. (2009). Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain. IEEE Electron Device Letters 30 (3) : 250-253. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2010723
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82871
dc.description.abstractWe report the first investigation of the impact of diamond-like carbon (DLC) high-stress liner on strained p-channel metal-oxide-semiconductor field-effect transistors (p-FETs) having silicon-germanium (SiGe) source-and-drain (S/D) stressor. The DLC exhibited a very high compressive stress of ∼5 GPa. At a fixed Ioff of 1 × 10-7 A/μ, the DLC liner stressor contributed to a further 11% Ion enhancement for p-FETs with Si0.75 Ge0.25 S/D. This is the first demonstration that further boost in device performance in a p-FET that is already strained using Si0.75Ge0.25 S/D can be achieved with DLC liner stressor. Due to the extremely high intrinsic compressive stress of the DLC, a very small DLC thickness of ∼27 nm is sufficient for achieving significant strain effect and performance enhancement. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.2010723
dc.sourceScopus
dc.subjectDiamond
dc.subjectDielectric films
dc.subjectMOS devices
dc.subjectMOSFETs
dc.subjectStrain
dc.subjectStress
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2008.2010723
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume30
dc.description.issue3
dc.description.page250-253
dc.description.codenEDLED
dc.identifier.isiut000263920400016
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