Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.920755
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dc.titleP-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance
dc.contributor.authorLee, R.T.-P.
dc.contributor.authorTan, K.-M.
dc.contributor.authorLim, A.E.-J.
dc.contributor.authorLiow, T.-Y.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorChi, D.-Z.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:34:27Z
dc.date.available2014-10-07T04:34:27Z
dc.date.issued2008-05
dc.identifier.citationLee, R.T.-P., Tan, K.-M., Lim, A.E.-J., Liow, T.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C. (2008-05). P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance. IEEE Electron Device Letters 29 (5) : 438-441. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920755
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82868
dc.description.abstractWe report the integration of nickel platinum germanosilicide (Ni1-yPtySiGe) contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of Ni1-yPtySiGe contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that Ni1-y PtySiGe incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height (φB P) among the Ni1-yPtySiGe candidates evaluated. The low φB P (0.309 eV) provides a 15% reduction in series resistance Rseries. With a superior morphological stability and reduced Rseries, FinFETs integrated with Ni0.90Pt0.10SiGe contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.920755
dc.sourceScopus
dc.subjectFinFET
dc.subjectNickel platinum
dc.subjectNickel silicide
dc.subjectResistance
dc.subjectSchottky barriers
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2008.920755
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue5
dc.description.page438-441
dc.description.codenEDLED
dc.identifier.isiut000255317400007
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