Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4760279
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dc.titleParallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions
dc.contributor.authorSahadevan, A.M.
dc.contributor.authorGopinadhan, K.
dc.contributor.authorBhatia, C.S.
dc.contributor.authorYang, H.
dc.date.accessioned2014-10-07T04:34:23Z
dc.date.available2014-10-07T04:34:23Z
dc.date.issued2012-10-15
dc.identifier.citationSahadevan, A.M., Gopinadhan, K., Bhatia, C.S., Yang, H. (2012-10-15). Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions. Applied Physics Letters 101 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4760279
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82863
dc.description.abstractThe capacitance of MgO based magnetic tunnel junctions (MTJs) has been observed to be magnetic field dependent. We propose an equivalent circuit for the MTJs with a parallel-leaky capacitance (C l) across the series combination of geometric and interfacial capacitance. The analysis of junctions with different tunneling magnetoresistance (TMR) values suggests higher C l for low TMR junctions. Using Cole-Cole plots, the capacitive nature of MTJs is manifested. Fitting with Maxwell-Wagner capacitance model validates the RC parallel network model for MTJs and the extracted field dependent parameters match with the experimental values. © 2012 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4760279
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.4760279
dc.description.sourcetitleApplied Physics Letters
dc.description.volume101
dc.description.issue16
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000310669300043
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