Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3658843
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dc.titleOrigin of anomalously high exchange field in antiferromagnetically coupled magnetic structures: Spin reorientation versus interface anisotropy
dc.contributor.authorRanjbar, M.
dc.contributor.authorPiramanayagam, S.N.
dc.contributor.authorWong, S.K.
dc.contributor.authorSbiaa, R.
dc.contributor.authorSong, W.
dc.contributor.authorTan, H.K.
dc.contributor.authorGonzaga, L.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:34:14Z
dc.date.available2014-10-07T04:34:14Z
dc.date.issued2011-11-01
dc.identifier.citationRanjbar, M., Piramanayagam, S.N., Wong, S.K., Sbiaa, R., Song, W., Tan, H.K., Gonzaga, L., Chong, T.C. (2011-11-01). Origin of anomalously high exchange field in antiferromagnetically coupled magnetic structures: Spin reorientation versus interface anisotropy. Journal of Applied Physics 110 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3658843
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82850
dc.description.abstractMagnetization reorientation from in-plane to perpendicular direction, observed in Co thin film coupled antiferromagnetically to high perpendicular magnetic anisotropy (Co/Pd) multilayers, is studied systematically for Co thickness ranging from 0 to 2.4 nm. The sample with 0.75 nm thick Co showed an exchange coupling field (Hex) exceeding 15 kOe at room temperature and 17.2 kOe at 5 K. With an increase of Co thickness, Hex decreased as expected and beyond certain thickness, magnetization reorientation was not observed. Indeed, three regions were observed in the thickness dependence of magnetization of the thin layer; one in which the thin layer (in the thickness range up to 0.8 nm) had a perpendicular magnetic anisotropy due to interface effects and antiferromagnetic coupling, another in which the thin layer (0.9-1.2 nm) magnetization had no interface or crystallographic anisotropy but was reoriented in the perpendicular direction due to antiferromagnetic coupling, and the third (above 1.2 nm) in which the magnetization was in-plane. In addition, Hall effect measurements were carried out to observe the anomalous and planar Hall voltages and to quantify the perpendicular and in-plane components of magnetization. The sample with thicker Co layer (2.4 nm) showed an in-plane component of magnetization, whereas the sample with 0.75 nm Co showed no in-plane component. The high value of Hex observed in 0.75 nm Co samples can have important implications in spintronics and bit patterned media. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3658843
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3658843
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume110
dc.description.issue9
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000297062100077
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