Please use this identifier to cite or link to this item:
|Title:||Optimization of NEMS pressure sensors with a multilayered diaphragm using silicon nanowires as piezoresistive sensing elements||Authors:||Lou, L.
|Issue Date:||May-2012||Citation:||Lou, L., Zhang, S., Park, W.-T., Tsai, J.M., Kwong, D.-L., Lee, C. (2012-05). Optimization of NEMS pressure sensors with a multilayered diaphragm using silicon nanowires as piezoresistive sensing elements. Journal of Micromechanics and Microengineering 22 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0960-1317/22/5/055012||Abstract:||A pressure sensor with a 200 μm diaphragm using silicon nanowires (SiNWs) as a piezoresistive sensing element is developed and optimized. The SiNWs are embedded in a multilayered diaphragm structure comprising silicon nitride (SiN x) and silicon oxide (SiO 2). Optimizations were performed on both SiNWs and the diaphragm structure. The diaphragm with a 1.2 μm SiN x layer is considered to be an optimized design in terms of small initial central deflection (0.1 μm), relatively high sensitivity (0.6% psi 1) and good linearity within our measurement range. © 2012 IOP Publishing Ltd.||Source Title:||Journal of Micromechanics and Microengineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/82845||ISSN:||09601317||DOI:||10.1088/0960-1317/22/5/055012|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.