Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.physe.2003.10.004
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dc.titleOptical transitions and interface structure in (GaP)m/(AlP) n modulated period superlattices
dc.contributor.authorSoni, R.K.
dc.contributor.authorTripathy, S.
dc.contributor.authorAsahi, H.
dc.date.accessioned2014-10-07T04:34:03Z
dc.date.available2014-10-07T04:34:03Z
dc.date.issued2004-02
dc.identifier.citationSoni, R.K., Tripathy, S., Asahi, H. (2004-02). Optical transitions and interface structure in (GaP)m/(AlP) n modulated period superlattices. Physica E: Low-Dimensional Systems and Nanostructures 21 (1) : 131-142. ScholarBank@NUS Repository. https://doi.org/10.1016/j.physe.2003.10.004
dc.identifier.issn13869477
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82834
dc.description.abstractWe have investigated optical transitions and atomically controlled interface structure in modulated period (GaP)m/(AlP)n (m, n number of monolayers) superlattices (SLs) using low-temperature photoluminescence (PL) and Raman scattering (RS) techniques. The modulated superlattices (GaP)m1(AlP)n1(GaP)m2(AlP) n2 were grown on Si-doped GaAs (001) substrate by gas source molecular beam epitaxy (m = m1+m2,n = n1+n 2,m1 > m2,n1 > n2), where total number of periods of GaP and AlP are constants, m = 13 and n = 7. By modulating the internal structure of the superlattice period strong enhancement in PL intensity was observed. In the modulated SLs, with reducing GaP layer (m1) thickness, the PL peak shows blue shift and splitting accompanied with a large intensity enhancement. We attribute enhanced strength of the optical transition to the electronic transition resulting from the disordered period in the superlattice structures. We have evaluated the Γ-X mixing factor as a function of layer thickness, from the relative oscillator strengths of the quasi-direct transitions in the modulated SLs to that of normal SL using first-order perturbation theory. Using confined optical phonons as a probe in the Raman scattering measurements, we have investigated interface structure of these modulated SLs. The confined vibrations are sensitive to the layer thickness and the presence of the atomic scale roughness at the interface. © 2003 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.physe.2003.10.004
dc.sourceScopus
dc.subjectGaP/AlP superlattice
dc.subjectPhotoluminescence
dc.subjectRaman scattering
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.physe.2003.10.004
dc.description.sourcetitlePhysica E: Low-Dimensional Systems and Nanostructures
dc.description.volume21
dc.description.issue1
dc.description.page131-142
dc.description.codenPELNF
dc.identifier.isiut000189251300015
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