Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1782274
DC FieldValue
dc.titleOptical properties of SiO x nanostructured films by pulsed-laser deposition at different substrate temperatures
dc.contributor.authorChen, X.Y.
dc.contributor.authorLu, Y.F.
dc.contributor.authorWu, Y.H.
dc.contributor.authorCho, B.J.
dc.contributor.authorSong, W.D.
dc.contributor.authorDai, D.Y.
dc.date.accessioned2014-10-07T04:34:01Z
dc.date.available2014-10-07T04:34:01Z
dc.date.issued2004-09-15
dc.identifier.citationChen, X.Y., Lu, Y.F., Wu, Y.H., Cho, B.J., Song, W.D., Dai, D.Y. (2004-09-15). Optical properties of SiO x nanostructured films by pulsed-laser deposition at different substrate temperatures. Journal of Applied Physics 96 (6) : 3180-3186. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1782274
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82832
dc.description.abstractThe study of the structures and optical properties related to quantum confinement effects were carried out using silicon oxide (SiO x) nanostructured films. These films were formed by pulsed-laser deposition of silicon in oxygen at different substrate temperatures. Laser ablation of single crystal Si(100) target showed polycrystal structure due to melting and recrystallization. The photoluminescence (PL) peak energy with silicon concentration from pulsed-laser deposition (PLD) and plasma enhanced chemical vapor deposition (PECVD) results supported the fact that light emission originated from quantum confinement theory (QCE).
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1782274
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1782274
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume96
dc.description.issue6
dc.description.page3180-3186
dc.description.codenJAPIA
dc.identifier.isiut000223720000019
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