Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0921-5107(01)00545-1
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dc.titleOptical and electrical properties of p-type transparent conducting Cu-Al-O thin films prepared by plasma enhanced chemical vapor deposition
dc.contributor.authorWang, Y.
dc.contributor.authorGong, H.
dc.contributor.authorZhu, F.
dc.contributor.authorLiu, L.
dc.contributor.authorHuang, L.
dc.contributor.authorHuan, A.C.H.
dc.date.accessioned2014-10-07T04:33:58Z
dc.date.available2014-10-07T04:33:58Z
dc.date.issued2001-08-22
dc.identifier.citationWang, Y., Gong, H., Zhu, F., Liu, L., Huang, L., Huan, A.C.H. (2001-08-22). Optical and electrical properties of p-type transparent conducting Cu-Al-O thin films prepared by plasma enhanced chemical vapor deposition. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 85 (2-3) : 131-134. ScholarBank@NUS Repository. https://doi.org/10.1016/S0921-5107(01)00545-1
dc.identifier.issn09215107
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82827
dc.description.abstractThe growth of p-type transparent conducting oxide thin film has attracted much attention due to its potential in making novel transparent p-n junctions for device applications. In this work, the transparent conducting Cu-Al-O thin films were prepared by plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac)2 and Al(acac)3 (acac=acetylacetonate) in a mole ratio of 1:1 sublimated at 150°C. The metal organic vapor was carried into a reaction chamber by argon gas. Reactive oxygen gas was introduced into the chamber via another gas inlet. Substrate temperatures were varied over the range 630-800°C and the processing pressure was kept constant at about 0.15 Torr. Seebeck effect measurements revealed that these films were p-type semiconductors. X-ray diffraction results showed that Cu-Al-O films were amorphous. The resistivity mechanism of the low resistivity of Cu-Al-O films is probably governed by the scattering of the dominant hole-carriers by impurities. The film conductivity increased with increasing growth temperature. The films prepared at 800°C with a resistivity of 5.0 Ω·cm and transparency of over 60% in the visible light region were achieved. © 2001 Elsevier Science B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0921-5107(01)00545-1
dc.sourceScopus
dc.subjectCu-Al-O
dc.subjectP-type
dc.subjectPE-MOCVD
dc.subjectSemiconducting
dc.subjectTransparent
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/S0921-5107(01)00545-1
dc.description.sourcetitleMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
dc.description.volume85
dc.description.issue2-3
dc.description.page131-134
dc.description.codenMSBTE
dc.identifier.isiut000170247700011
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