Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2007.04.024
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dc.titleOne-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application
dc.contributor.authorTeng, J.H.
dc.contributor.authorDong, J.R.
dc.contributor.authorChong, L.F.
dc.contributor.authorChua, S.J.
dc.contributor.authorWang, Y.J.
dc.contributor.authorChen, A.
dc.date.accessioned2014-10-07T04:33:55Z
dc.date.available2014-10-07T04:33:55Z
dc.date.issued2007-07-01
dc.identifier.citationTeng, J.H., Dong, J.R., Chong, L.F., Chua, S.J., Wang, Y.J., Chen, A. (2007-07-01). One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application. Journal of Crystal Growth 305 (1) : 45-49. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2007.04.024
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82823
dc.description.abstractWe report one-dimensional aligned growth of InAs quantum dots (QDs) in a dielectric grating on InP (0 0 1) by metalorganic vapor phase epitaxy (MOVPE). InAs QDs were grown selectively along the edge of the SiO2 stripes to form dual chains in each period of the grating formed by laser holography method with a period of 244 nm. The linear alignment property of InAs dots was maintained in wet chemical etched SiO2 array template with 1.7 μm openings. The InAs QDs grown in SiO2 grating template showed room temperature photoluminescence (PL) emission around 1.5 μm, red shifted from QDs grown on plain InP substrate. The results can be applied to naturally gain coupled distributed feedback lasers and coupled QDs growth. © 2007 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jcrysgro.2007.04.024
dc.sourceScopus
dc.subjectA1. Nanostructures
dc.subjectA3. Metalorganic vapor phase epitaxy
dc.subjectA3. Selective epitaxy
dc.subjectB2. Semiconducting III-V materials
dc.subjectB2. Semiconducting indium phosphide
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentSINGAPORE SYNCHROTRON LIGHT SOURCE
dc.description.doi10.1016/j.jcrysgro.2007.04.024
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume305
dc.description.issue1
dc.description.page45-49
dc.description.codenJCRGA
dc.identifier.isiut000247841300010
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