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|Title:||One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application||Authors:||Teng, J.H.
A3. Metalorganic vapor phase epitaxy
A3. Selective epitaxy
B2. Semiconducting III-V materials
B2. Semiconducting indium phosphide
|Issue Date:||1-Jul-2007||Citation:||Teng, J.H., Dong, J.R., Chong, L.F., Chua, S.J., Wang, Y.J., Chen, A. (2007-07-01). One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application. Journal of Crystal Growth 305 (1) : 45-49. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2007.04.024||Abstract:||We report one-dimensional aligned growth of InAs quantum dots (QDs) in a dielectric grating on InP (0 0 1) by metalorganic vapor phase epitaxy (MOVPE). InAs QDs were grown selectively along the edge of the SiO2 stripes to form dual chains in each period of the grating formed by laser holography method with a period of 244 nm. The linear alignment property of InAs dots was maintained in wet chemical etched SiO2 array template with 1.7 μm openings. The InAs QDs grown in SiO2 grating template showed room temperature photoluminescence (PL) emission around 1.5 μm, red shifted from QDs grown on plain InP substrate. The results can be applied to naturally gain coupled distributed feedback lasers and coupled QDs growth. © 2007 Elsevier B.V. All rights reserved.||Source Title:||Journal of Crystal Growth||URI:||http://scholarbank.nus.edu.sg/handle/10635/82823||ISSN:||00220248||DOI:||10.1016/j.jcrysgro.2007.04.024|
|Appears in Collections:||Staff Publications|
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