Omega-gate p-MOSFET with nanowirelike SiGe/Si core/shell channel

Abstract

We demonstrated, for the first time, p-MOSFETs LG ≥ 40 nm with SiGe/Si core/shell channel integrated on bulk Si using a CMOS-compatible top-down processes. The Omega-shaped nanowire (NW)-like channels comprised of ∼12-nm-thick inner SiGe core and 4-nm-thick outer Si shell. The devices exhibited good subthreshold characteristics (with SS ∼128 mV/dec), suggesting successful surface passivation of the SiGe NW body by the outer Si capping layer. Drive currents of ∼167 μA/μm is achieved, which is 15% enhancement over the reference Si-channel devices fabricated by the same process. Double gm peaks are observed at low drain bias for the core/shell SiGe NW devices, confirming the quantum confinement of holes in the SiGe inner core. © 2009 IEEE.